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RF Components – Gallium Arsenide and Gallium Nitride Foundry

RF Components � Gallium Arsenide and Gallium Nitride Foundry

Technologies, Prototypes and Products To Revolutionize Customers' Future Missions

Radio Frequency Components is Raytheon's Department of Defense- accredited Category 1A Trusted Foundry for custom gallium arsenide (GaAs) and gallium nitride (GaN) monolithic microwave integrated circuits (MMICs).

The facility is a leader in producing gallium nitride components, which emit five times the radio frequency power of previous technologies – a property that could result in lighter, more powerful electronics. The Andover facility provides a complete services solution, including circuit design, layout, modeling, fabrication, test and evaluation, module design and prototyping.

Raytheon provides full vertical integration through its Advanced Products Center, which performs high-rate module manufacturing, and its Integrated Air Defense Center, which handles microwave and radar manufacturing. Radio Frequency Components currently offers multiple, high-reliability processes for custom-designed GaN and GaAs monolithic microwave integrated circuits.They include GaN High Electron-Mobility Transistors (HEMT), GaAs Pseudomorphic Heterostructure HEMT (pHEMT) and GaAs Metamorphic Heterostructure HEMT (mHEMT).

The facility's monolithic microwave integrated circuit processes span microwave- and millimeter-wave frequency ranges. They address low-noise amplifier, control, power amplifier, switch and limiter applications. Raytheon's GaN processes are the most mature and affordable in the industry, while providing high power density and power-added efficiency.

The microwave GaN process has achieved Manufacturing Readiness Level 8 (MRL 8) while delivering microwave power at 30 percent of the cost per watt compared to well-established GaAs technology. Extensive testing has demonstrated GaN's reliability exceeds all mission requirements.

Advanced Technology Programs

The foundry engages in targeted research and development and manufacturing technology contracts through Raytheon's Advanced Technology Programs group, which is focused on providing cutting-edge capabilities to warfighters and civil authorities.

The group fosters innovation by partnering with customers, universities and small businesses. It specializes in research and development programs with innovative agencies including the Defense Advanced Research Projects Agency (DARPA), the Office of Naval Research (ONR) and the Air Force Research Laboratory (AFRL).

Foundry-Supported Key Capabilities

Air and Missile Defense

  • Patriot
  • Standard Missile - 6

Command, Control, Communications, Computers and Intelligence (C4I)

  • Secure Mobile Anti-Jam Reliable Tactical Terminal (SMART-T)
  • Navy Multiband Terminal

Electronic Warfare

  • Next Generation Jammer

Missiles and Precision Weapons

  • Small Diameter Bomb II (SDB II)
  • Evolved Seasparrow Missile (ESSM)
  • Miniature Air Launched Decoy (MALD®)
  • Joint Air-to-Ground Missile (JAGM)
  • ALE-50 Towed Decoy System

Sensors and Imaging

  • Active Electronically Scanned Array (AESA) Radar Systems
  • Terminal High-Altitude Area Defense (THAAD) Radar System
  • Joint Land Attack Cruise Missile Defense Elevated Netted Sensor (JLENS) System
  • Cobra Judy Replacement Radar
  • Air and Missile Defense Radar (AMDR)
  • AN/APY-10 Maritime, Littoral and Overland Surveillance Radar
  • X-band Radar (XBR)

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15 Years of Gallium Nitride Innovation

Gallium Nitride Innovation Launch Infographic

Gallium Nitride (GaN) Technology: Powering Electronic Warfare Innovations

Powering Electronic Warfare Innovations Launch Infographic

News Releases

Raytheon Gallium Nitride Technology Validated For Space Applications
Posted: Dec. 17, 2014

US government honors Raytheon for GaN innovations
Posted: Jun. 13, 2013

Raytheon Seeks to Triple Gallium Nitride Capabilities
Posted: Apr. 11, 2012

Raytheon Demonstrates Gallium Nitride Advantages in Radar Components
Posted: Apr. 16, 2008